LOW-FREQUENCY PHOTOCURRENT OSCILLATIONS IN CDIN₂S₄ SINGLE CRYSTALSSEKI Y; ENDO S; IRIE T et al.1980; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1980; VOL. 19; NO 9; PP. 1667-1674; BIBL. 10 REF.Article

COMPUTER SIMULATION OF PULSE-TYPE PHOTOCURRENT OSCILLATIONS IN CDIN₂S₄ SINGLE CRYSTALSSEKI Y.1981; JPN. J. APPL. PHYS.; ISSN 0021-4922; JPN; DA. 1981; VOL. 20; NO 3; PP. 561-564; BIBL. 10 REF.Article

PHOTOLUMINESCENCE OF CHROMIUM DOPED CDIN₂S₄GRABER N; ORFINO F; SCHWERDTFEGER CF et al.1980; SOLID STATE COMMUN.; ISSN 0038-1098; USA; DA. 1980; VOL. 36; NO 5; PP. 407-410; BIBL. 14 REF.Article

Piezoresistance in CdIn₂S₄NAKANISHI, H; ENDO, S; IRIE, T et al.Physica status solidi. B. Basic research. 1984, Vol 124, Num 1, pp K101-104, issn 0370-1972Article

Photoélectrochimie de CdIn₂S₄: caractéristiques photoélectrochimiques de CdIn₂S₄(n)/électrolyte aqueux = Photoelectrochemistry of CdIn₂S₄: photoelectrocheminal characteristics of n-CdInS₄/aqueous electrolyte systemSAVADOGO, O; YAZBECK, J; DESCHANVRES, A et al.Materials research bulletin. 1983, Vol 18, Num 12, pp 1455-1461, issn 0025-5408Article

DETECTION OF THE RAMAN ACTIVE T_2G MODE IN CDLN₂S₄ FOURIER TRANSFORM SPECTROSCOPYJOSHI NV.1982; JOURNAL OF RAMAN SPECTROSCOPY; ISSN 0377-0486; GBR; DA. 1982; VOL. 13; NO 3; PP. 207-208; BIBL. 10 REF.Article

PHONON DENSITY OF STATES AND HEAT CAPACITY OF CD₂INS₄ALDZHANOV MA; ALIEV AM; VELIEV RK et al.1983; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1983; VOL. 115; NO 2; PP. K75-K78; BIBL. 9 REF.Article

Photoluminescence kinetics in Cr-doped CdIn₂S₄BEAUVAIS, J; FORTIN, E; KULYUK, L et al.Solid state communications. 1991, Vol 79, Num 5, pp 435-438, issn 0038-1098Article

The contribution of exciton-phonon interaction and cation disorder to near-band-edge extrinsic absorption in II-III₂-VI₄ compoundsGEORGOBIANI, A. N; URSAKI, V. V; RADAUTSAN, S. I et al.Solid state communications. 1985, Vol 56, Num 2, pp 155-157, issn 0038-1098Article

VUV Reflection spectra and fundamental optical constants of CdIn₂S₄, CdInGaS₄, Cd₃InGaS₆ single crystalsTAKIZAWA, T; OHWADA, H; KOBAYASHI, H et al.Solid state communications. 1988, Vol 67, Num 7, pp 739-743, issn 0038-1098Article

Saturation photoconductivity in CdIn₂S₄CHARBONNEAU, S; FORTIN, E; ANEDDA, A et al.Physical review. B, Condensed matter. 1985, Vol 31, Num 4, pp 2326-2329, issn 0163-1829Article

Photoconductivity of monocrystals of CdIn₂S₄VINCENT, A. B; RODRĪGUEZ, C. E; JOSHI, N. V et al.Canadian journal of physics (Print). 1984, Vol 62, Num 9, pp 883-888, issn 0008-4204Article

Photoélectrochimie de CdIn₂S₄: potentiel de bandes plates en présence d'ions sulfures = CdIn₂S₄ photoelectrochemistry: flat band voltage in presence of sulfid ionsSAVADOGO, O; YAZBECK, J; ALLAIS, G et al.Revue de chimie minérale. 1984, Vol 21, Num 3, pp 292-298, issn 0035-1032Article

Time-dependent photoconductivity in CdIn₂S₄TAKIZAWA, T; TAKEUCHI, H; KANBARA, K et al.Japanese journal of applied physics. 1988, Vol 27, Num 2, pp L234-L236, issn 0021-4922, 2Article

PREPARATION ET PROPRIETES PHOTOVOLTAIQUES DE L'HETEROJONCTION HGCR₂SE₄-CDIN₂S₄MATSUMOTO K; KOGUCHI N.1978; J. JAP. INST. METALS; JAP.; DA. 1978; VOL. 42; NO 1; PP. 25-32; ABS. ANGL.; BIBL. 13 REF.Article

TIME-VARYING TEMPERATURE PROFILE CVD METHODS FOR GROWING CUINS₂ AND CDIN₂S₄ CRYSTALSPAORICI C; ZANOTTI L; CURTI M et al.1982; CRYST. RES. TECHNOL. (1979); ISSN 0232-1300; DDR; DA. 1982; VOL. 17; NO 8; PP. 917-924; BIBL. 16 REF.Article

PHOTOLUMINESCENCE OF CDIN₂S₄ SINGLE CRYSTALS. INVESTIGATION OF THE NATURE OF THE RECOMBINATION CENTRESGRILLI E; GUZZI M; MOSKALONOV AV et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 2; PP. 515-522; ABS. FRE; BIBL. 18 REF.Article

FAR-INFRARED ABSORPTION SPECTRA OF CDINALS₄ SINGLE CRYSTALSABBASOV AN; ALLAKHVERDIEV KR; ALIEV FG et al.1982; PHYSICA STATUS SOLIDI. (B). BASIC RESEARCH; ISSN 0370-1972; DDR; DA. 1982; VOL. 111; NO 2; PP. K129-K131; BIBL. 3 REF.Article

LATTICE THERMAL EXPANSION OF SPINEL CDIN₂S₄KISTAIAH P; SATYANARAYANA MURTHY K; KRISHNA RAO KV et al.1982; JOURNAL OF MATERIALS SCIENCE LETTERS; ISSN 510106; GBR; DA. 1982; VOL. 1; NO 7; PP. 285-287; BIBL. 14 REF.Article

DETECTION OF PARTIAL INVERSE SPINAL STRUCTURE IN CDIN₂S₄ BY FOURIER TRANSFORM SPECTROSCOPYJOSHI NV.1980; J. PHYS. CHEM. SOLIDS; ISSN 0022-3697; USA; DA. 1980; VOL. 41; NO 9; PP. 943-945; BIBL. 12 REF.Article

NEGATIVE RESISTANCE IN CDIN₂S₄ SINGLE CRYSTALSSEKI Y; ENDO S; IRIE T et al.1982; PHYSICA STATUS SOLIDI. (A). APPLIED RESEARCH; ISSN 0031-8965; DDR; DA. 1982; VOL. 71; NO 2; PP. 365-370; ABS. GER; BIBL. 9 REF.Article

STRUCTURE ET PROPRIETES PHOTOELECTRIQUES DES COUCHES DE CDIN₂S₄ OBTENUES PAR DEPOT SOUS VIDEALIEV FI; GUSEJNOV DT; NANI R KH et al.1978; IZVEST. AKAD. NAUK S.S.S.R., NEORG. MATER.; SUN; DA. 1978; VOL. 14; NO 5; PP. 849-851; H.T. 1; BIBL. 8 REF.Article

Investigation of photoelectronic processes in CdIn₂S₄ by photoinduced current transient spectroscopySERPI, A; TAPIERO, M; ZIELINGER, J. P et al.Physica status solidi. A. Applied research. 1986, Vol 93, Num 1, pp 241-249, issn 0031-8965Article

Pressure effect on the absorption edges of CdIn₂S₄ and related compoudsNAKANISHI, H; IRIE, T.Physica status solidi. B. Basic research. 1984, Vol 126, Num 2, pp K145-K148, issn 0370-1972Article

Optical gain CdIn₂S₄BEAUVAIS, J; FORTIN, E.Journal of applied physics. 1987, Vol 62, Num 4, pp 1349-1351, issn 0021-8979Article